2SD2170 transistors medium power transistor (motor, relay drive) (90 , 2a) 2SD2170 ! features 1) built-in zener diode between collector and base. 2) zener diode has low dispersion. 3) strong protection against reverse power surges due to "l" loads. 4) darlington connection for high dc current gain. 5) built-in resistor between base and emitter. 6) built-in damper diode. ! ! ! ! external dimensions (units : mm) (3) emitter (2) collector (1) base eiaj : sc-62 1.5 0.4 1.5 0.4 1.6 0.5 3.0 0.4 1.5 ( 3 ) 4.5 ( 1 ) ( 2 ) 0.5 4.0 2.5 1.0 rohm : mpt3 ! ! ! ! absolute maximum ratings (ta=25 c) parameter symbol v cbo v ceo v ebo i c p c tj tstg limits 90 90 +20 +20 ? 10 ? 10 6 2 3 2 * 1 * 2 150 ? 55~+150 unit v v v a (dc) a (pulse) w c c collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature * 1 single pulse pw = 10ms , duty = 1 / 2 * 2 when mounted on a 40 x 40 x 0.7 mm ceramic board. ! packaging specifications and h fe ! ! ! ! equivalent circuit type 2SD2170 mpt3 1k~10k t100 1000 dm package h fe code basic ordering unit (pieces) marking r 2 r 1 e b c c b e : emitter : base : collector r 1 3.5k ? r 2 300 ? ! ! ! ! electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions bv cbo bv ceo i cbo i ebo h fe f t cob 80 80 - - 1000 - - - - - - - 80 25 110 110 10 3 10000 - - v v a ma - * 1 * 2 * 1 mhz pf i c = 50 a i c = 1ma v cb = 70v v eb = 5v v ce(sat) - - 1.5 v i c /i b = 1a/1ma v ce = 2v , i c = 1a v ce = 5v , i e = ? 0.1a , f = 30mhz v cb = 10v , i e = 0a , f = 1mhz collector-base breakdown voltage collector-emitter breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio transition frequency output capacitance collector-emitter saturation voltage * 1 measured using pulse current. * 2 transition frequency of the device. + 20 ? 10
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